InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
Makimoto, Toshiki; Kurishima, Kenji; Kobayashi, Takashi; Ishibashi, Tadao
- 期刊名称Japanese Journal of Applied Physics
- 作者Makimoto, Toshiki; Kurishima, Kenji; Kobayashi, Takashi; Ishibashi, Tadao
- 卷第30卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小587.73KB
- 发表时间1991-12-30
- DOI10.1143/JJAP.30.3815
- 页码3815-3817