High Performance Resists Tailored for 248 nm Chemical Amplification of Resist Lines Technology

• 作者R. Sezi; H. Borndörfer; R. Leuschner; C. Nölscher; M. Sebald; H. Ahne; S. Birkle
• 文件大小2286.89KB
• 发表时间1991
• DOI10.1143/JJAP.30.3108