发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

[IEEE Proceedings of IEEE International Electron Devices Meeting - San Francisco, CA, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - 3-D topography simulation of via holes using generalized solid modeling

[IEEE Proceedings of IEEE International Electron Devices Meeting - San Francisco, CA, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - 3-D topography simulation of via holes using generalized solid modeling

Tazawa, ; Leon, ; Anderson, ; Abe, ; Saito, ; Yoshii, ; Scharfetter,

作者Tazawa, ; Leon, ; Anderson, ; Abe, ; Saito, ; Yoshii, ; Scharfetter,
文件大小359.10KB
发表时间1992
DOI10.1109/iedm.1992.307335
页码173-176

← 返回【学霸图书馆】主页