Strain effects on normal incidence hole intersubband absorption in a p-type semiconductor quantum well

• 期刊名称Journal of Applied Physics
• 作者Teng, D.; Lee, C.; Eastman, L. F.
• 卷第72卷
• 期第4期
• 印刷ISSN0021-8979
• 文件大小599.93KB
• 发表时间1992
• DOI10.1063/1.351722