Scanning photoluminescence technique: application to defect recovery of ion-implanted InP

• 期刊名称Semiconductor Science and Technology
• 作者L'Haridon, H; Favennec, P N; Salvi, M
• 卷第7卷
• 印刷ISSN0268-1242
• 电子ISSN1361-6641
• 文件大小313.01KB
• 发表时间1992-01-01
• DOI10.1088/0268-1242/7/1A/006