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GaN-AlxGa1−xN Heterostructures Deposition by Low Pressure Metalorganic Chemical Vapor Deposition for Metal Insulator Semiconductor Field Effect Transistor (Misfet) Devices

GaN-AlxGa1−xN Heterostructures Deposition by Low Pressure Metalorganic Chemical Vapor Deposition for Metal Insulator Semiconductor Field Effect Transistor (Misfet) Devices

Asif Khan, M.; Kuznia, J. N.; Bhattarai, A. R.; Olson, D. T.

期刊名称MRS Proceedings
作者Asif Khan, M.; Kuznia, J. N.; Bhattarai, A. R.; Olson, D. T.
卷第281卷
电子ISSN1946-4274
文件大小714.37KB
发表时间1992-1
DOI10.1557/proc-281-769

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