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Damage distribution in GaAs implanted at elevated temperature

Damage distribution in GaAs implanted at elevated temperature

M. Kalitzova; D. Karpuzov; N. Pashov; G. Vitali; M. Rossi; R. Scholz
  • 作者M. Kalitzova; D. Karpuzov; N. Pashov; G. Vitali; M. Rossi; R. Scholz
  • 印刷ISSN0168-583X
  • 文件大小298.09KB
  • 发表时间1993
  • DOI10.1016/0168-583x(93)96201-m
  • 页码647-650
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