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Crystallographic preferred orientation development in a buckled single layer: a computer simulation

Crystallographic preferred orientation development in a buckled single layer: a computer simulation

Y. Zhang; B.E. Hobbs; M.W. Jessell
  • 作者Y. Zhang; B.E. Hobbs; M.W. Jessell
  • 卷第15卷
  • 印刷ISSN0191-8141
  • 文件大小1887.54KB
  • 发表时间1993
  • DOI10.1016/0191-8141(93)90125-t
  • 页码265-276
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