Electrical and physical properties of high-Ge-content Si/SiGe
<i>p</i>
-type quantum wells

Electrical and physical properties of high-Ge-content Si/SiGe p -type quantum wells

Kiehl, R. A.; Batson, P. E.; Chu, J. O.; Edelstein, D. C.; Fang, F. F.; Laikhtman, B.; Lombardi, D. R.; Masselink, W. T.; Meyerson, B. S.; Nocera, J. J.; Parsons, A. H.; Stanis, C. L.; Tsang, J. C.

期刊名称Physical Review B
作者Kiehl, R. A.; Batson, P. E.; Chu, J. O.; Edelstein, D. C.; Fang, F. F.; Laikhtman, B.; Lombardi, D. R.; Masselink, W. T.; Meyerson, B. S.; Nocera, J. J.; Parsons, A. H.; Stanis, C. L.; Tsang, J. C.
卷第48卷
期第16期
印刷ISSN0163-1829
电子ISSN1095-3795
文件大小1655.84KB
发表时间1993-10-15
DOI10.1103/PhysRevB.48.11946
页码11946-11959

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Electrical and physical properties of high-Ge-content Si/SiGe p -type quantum wells