Defect formation during growth of hydrogenated amorphous silicon
Ganguly, Gautam; Matsuda, Akihisa
- 期刊名称Physical Review B
- 作者Ganguly, Gautam; Matsuda, Akihisa
- 卷第47卷
- 期第7期
- 印刷ISSN0163-1829
- 电子ISSN1095-3795
- 文件大小467.37KB
- 发表时间1993-2-15
- DOI10.1103/PhysRevB.47.3661
- 页码3661-3670