[IEEE Proceedings of IEEE International Reliability Physics Symposium - Atlanta, GA, USA (1993.03.23-1993.03.25)] 31st Annual Proceedings Reliability Physics 1993 - Gate dielectric integrity and reliability in 0.5- mu m CMOS technology
Strong, A.W.; Stamper, A.K.; Bolam, R.J.; Furukawa, T.; Gow, C.J.; Gow, T.R.; Martin, D.W.; Mittl, S.W.; Nakos, J.S.; Pennington, S.L.
- 作者Strong, A.W.; Stamper, A.K.; Bolam, R.J.; Furukawa, T.; Gow, C.J.; Gow, T.R.; Martin, D.W.; Mittl, S.W.; Nakos, J.S.; Pennington, S.L.
- 文件大小426.45KB
- 发表时间1993
- DOI10.1109/relphy.1993.283309
- 页码18-21