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Formation of SiGe and SiGeC Layers on Si by Ge and C Ion Implantation and Subsequent Ion-Beam-Induced Epitaxial Crystallization

Formation of SiGe and SiGeC Layers on Si by Ge and C Ion Implantation and Subsequent Ion-Beam-Induced Epitaxial Crystallization

Kobayashi, Naoto; Hasegawa, Masataka; Phillips, J.R.; Hayashi, Nobuyuki; Tanoue, Hisao; Shibata, Hajime; Makita, Yunosuke
  • 期刊名称MRS Proceedings
  • 作者Kobayashi, Naoto; Hasegawa, Masataka; Phillips, J.R.; Hayashi, Nobuyuki; Tanoue, Hisao; Shibata, Hajime; Makita, Yunosuke
  • 卷第316卷
  • 电子ISSN1946-4274
  • 文件大小454.61KB
  • 发表时间1993-1
  • DOI10.1557/proc-316-771
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