Ion implantation of porous silicon
- 期刊名称Applied Physics Letters
- 作者Peng, C.; Fauchet, P. M.; Rehm, J. M.; McLendon, G. L.; Seiferth, F.; Kurinec, S. K.
- 卷第64卷
- 期第10期
- 印刷ISSN0003-6951
- 文件大小588.88KB
- 发表时间1994
- DOI10.1063/1.110858
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