[IEEE 1994 IEEE Hong Kong Electron Devices Meeting - Hong Kong (18 July 1994)] 1994 IEEE Hong Kong Electron Devices Meeting - Electrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques
Xu, Z.; Lai, P.T.; Ng, W.T.
- 作者Xu, Z.; Lai, P.T.; Ng, W.T.
- 文件大小221.99KB
- 发表时间1994
- DOI10.1109/hkedm.1994.395138
- 页码18-21