Hydrogenation of Si- and Be-doped InGaPDallesasse, J. M.; Szafranek, I.; Baillargeon, J. N.; El-Zein, N.; Holonyak, N.; Stillman, G. E.; Cheng, K. Y. · Journal of Applied Physics · 1990

Band gap bowing in GaP1−xNx alloysLiu, X.; Bishop, S. G.; Baillargeon, J. N.; Cheng, K. Y. · Applied Physics Letters · 1993

Compositional modulation and long-range ordering in GaP/InP short-period superlattices grown by gas source molecular beam epitaxyHsieh, K. C.; Baillargeon, J. N.; Cheng, K. Y. · Applied Physics Letters · 1990

GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cellsBaillargeon, J. N.; Cheng, K. Y.; Cho, A. Y. · Applied Physics Letters · 1995

Incorporation of arsenic and phosphorus in GaxIn1−xAsyP1−y alloys grown by molecular-beam epitaxy using solid phosphorus and arsenic valved cracking cellsBaillargeon, J. N.; Cho, A. Y.; Cheng, K. Y. · Journal of Applied Physics · 1996

Electro-rheologyBlock, H; Kelly, J P · Journal of Physics D: Applied Physics · 1988

Semiconductor nanowiresLu, Wei; Lieber, Charles M · Journal of Physics D: Applied Physics · 2006

Nanoassembled model catalystsHeiz, Ueli; Schneider, Wolf-Dieter · Journal of Physics D: Applied Physics · 2000

Mechanisms for exchange biasStamps, R L · Journal of Physics D: Applied Physics · 2000

Thermal plasma waste treatmentHeberlein, Joachim; Murphy, Anthony B · Journal of Physics D: Applied Physics · 2008

Surface enhanced fluorescenceFort, Emmanuel; Grésillon, Samuel · Journal of Physics D: Applied Physics · 2008

Nanocomposite dielectrics—properties and implicationsNelson, J K; Hu, Y · Journal of Physics D: Applied Physics · 2005

Memristor-based neural networksThomas, Andy · Journal of Physics D: Applied Physics · 2013