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Comparison of advanced plasma sources for etching applications. I. Etching rate, uniformity, and profile control in a helicon and a multiple electron cyclotron resonance source

Comparison of advanced plasma sources for etching applications. I. Etching rate, uniformity, and profile control in a helicon and a multiple electron cyclotron resonance source

Tepermeister, I.
  • 期刊名称Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
  • 作者Tepermeister, I.
  • 卷第12卷
  • 期第4期
  • 印刷ISSN0734-211X
  • 文件大小1697.08KB
  • 发表时间1994-7
  • DOI10.1116/1.587758
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