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Development of rf sputtered, Cu-doped ZnTe for use as a contact interface layer to p-CdTe

Development of rf sputtered, Cu-doped ZnTe for use as a contact interface layer to p-CdTe

T. A. Gessert; A. R. Mason; R. C. Reedy; R. Matson; T. J. Coutts; P. Sheldon
  • 作者T. A. Gessert; A. R. Mason; R. C. Reedy; R. Matson; T. J. Coutts; P. Sheldon
  • 卷第24卷
  • 期第10期
  • 印刷ISSN0361-5235
  • 电子ISSN1543-186X
  • 文件大小1111.35KB
  • 发表时间1995-10
  • DOI10.1007/bf02655462
  • 页码1443-1449
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