Ion-beam-induced epitaxial crystallisation of metastable Si1−x−yGexCy layers fabricated by Ge and C ion implantation
- 作者Naoto Kobayashi; Masataka Hasegawa; Nobuyuki Hayashi; Hisao Tanoue; Hajime Shibata; Yunosuke Makita
- 卷第106卷
- 印刷ISSN0168-583X
- 文件大小498.49KB
- 发表时间1995
- DOI10.1016/0168-583x(95)00720-2
- 页码289-293