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Investigation of radiation damage in ion implanted and annealed SiC layers

Investigation of radiation damage in ion implanted and annealed SiC layers

W. Wesch; A. Heft; J. Heindl; H.P. Strunk; T. Bachmann; E. Glaser; E. Wendler
  • 作者W. Wesch; A. Heft; J. Heindl; H.P. Strunk; T. Bachmann; E. Glaser; E. Wendler
  • 卷第106卷
  • 印刷ISSN0168-583X
  • 文件大小659.31KB
  • 发表时间1995
  • DOI10.1016/0168-583x(96)80027-9
  • 页码339-345
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