Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. Part II: band deformation due to residual stress in the polysilicon emitter

• 作者Kondo, M.; Kobayashi, T.; Tamaki, Y.
• 卷第42卷
• 期第3期
• 印刷ISSN0018-9383
• 电子ISSN1557-9646
• 文件大小953.39KB
• 发表时间1995
• DOI10.1109/16.368040
• 页码427-435