Comparison of 80-200 nm gate length Al0.25GaAs/GaAs/(GaAs:AlAs), Al0.3GaAs/In0.15 GaAs/GaAs, and In0.52AlAs/In0.65GaAs/InP HEMTs

Thayne, I.G.; Jensen, G.U.; Holland, M.C.; Yaochung Chen; Weigi Li; Paulsen, A.; Davies, J.H.; Beaumont, S.P.; Bhattacharya, P.K.

作者Thayne, I.G.; Jensen, G.U.; Holland, M.C.; Yaochung Chen; Weigi Li; Paulsen, A.; Davies, J.H.; Beaumont, S.P.; Bhattacharya, P.K.
卷第42卷
期第12期
印刷ISSN0018-9383
电子ISSN1557-9646
文件大小1087.45KB
发表时间1995
DOI10.1109/16.477760
页码2047-2055

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