NaInAs(110) interface formation at RT
- 作者V.Yu. Aristov; P.S. Mangat; P. Soukiassian; G. Le Lay
- 印刷ISSN0039-6028
- 文件大小345.53KB
- 发表时间1995
- DOI10.1016/0039-6028(95)00381-9
同作者推荐
Properties of clean and oxidized Ge surfaces at low temperaturesE.I. Zavaritskaya · 1994
[Studies in Surface Science and Catalysis] Physics of Solid Surfaces 1984 Volume 23 || Electron Processes at Ultra Low Temperatures on the Cleavage Surfaces (111) and Bicrystals Interfaces (100) in GeZavaritskaya, E.I. · 1985