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Properties of deep photoluminescence bands in SiGe/Si quantum structures grown by molecular beam epitaxy

Properties of deep photoluminescence bands in SiGe/Si quantum structures grown by molecular beam epitaxy

Buyanova, I. A.; Chen, W. M.; Henry, A.; Ni, W.-X.; Hansson, G. V.; Monemar, B.

期刊名称Applied Physics Letters
作者Buyanova, I. A.; Chen, W. M.; Henry, A.; Ni, W.-X.; Hansson, G. V.; Monemar, B.
卷第67卷
期第12期
文件大小374.99KB
发表时间1995
DOI10.1063/1.115042

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