Photoluminescence characteristics of Si-doped In0.52Al0.48As grown on InP substrates by molecular beam epitaxy

• 作者S.F. Yoon; Y.B. Miao; K. Radhakrishnan
• 卷第151卷
• 印刷ISSN0022-0248
• 文件大小442.10KB
• 发表时间1995
• DOI10.1016/0022-0248(95)00078-x
• 页码243-248