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[IEEE 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. - Hong Kong (6-10 Nov. 1995)] 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings - Influence of neutral hole traps in thin gate oxides on MOS device degradation during Fowler-Nordheim stress

[IEEE 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. - Hong Kong (6-10 Nov. 1995)] 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings - Influence of neutral hole traps in thin gate oxides on MOS device degradation during Fowler-Nordheim stress

Samanta, P.; Sarkar, C.K.
  • 作者Samanta, P.; Sarkar, C.K.
  • 文件大小270.07KB
  • 发表时间1995
  • DOI10.1109/TENCON.1995.496388
  • 页码260-262
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