Investigation of the distribution of silicon interstitials in silicon and silicon-on-insulator structures after thermal oxidation
- 期刊名称Applied Physics Letters
- 作者Tsoukalas, D.; Tsamis, C.
- 卷第66卷
- 期第8期
- 印刷ISSN0003-6951
- 文件大小262.95KB
- 发表时间1995
- DOI10.1063/1.113815
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