An analytical model for lightly doped drain MOS transistors
- 期刊名称International Journal of Electronics
- 作者GHARABAGI, ROOBIK; KHALILI, ARMINEH; SHOLY, BESHARA
- 卷第78卷
- 期第3期
- 印刷ISSN0020-7217
- 电子ISSN1362-3060
- 文件大小139.63KB
- 发表时间1995-03
- DOI10.1080/00207219508926182
- 页码509-517
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