Influence of H[sub 2] Addition and Growth Temperature on CVD of SiC Using Hexamethyldisilane and Ar
- 期刊名称Journal of The Electrochemical Society
- 作者Nordell, N.
- 卷第142卷
- 期第2期
- 印刷ISSN0013-4651
- 文件大小916.93KB
- 发表时间1995
- DOI10.1149/1.2044099
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