Controlled Grain Size and Location in GE Thin Films on Silicon Dioxide by Low Temperature Selective Solid Phase Crystallization
Yang, C. M.; Atwater, Harry A.
- 期刊名称MRS Proceedings
- 作者Yang, C. M.; Atwater, Harry A.
- 卷第403卷
- 电子ISSN1946-4274
- 文件大小2262.60KB
- 发表时间1995-1
- DOI10.1557/proc-403-113