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Theoretical investigation of adsorption behavior during molecular beam epitaxy growth of GaAs: Ab initio based microscopic calculation

Theoretical investigation of adsorption behavior during molecular beam epitaxy growth of GaAs: Ab initio based microscopic calculation

Shiraishi, K

期刊名称Journal of Crystal Growth
作者Shiraishi, K
卷第150卷
印刷ISSN0022-0248
文件大小384.08KB
发表时间1995-5
DOI10.1016/0022-0248(94)00707-1
页码158-162

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