Descriptors of arrival-process burstiness with application to the discrete Markovian arrival process
- 作者Mary A. Johnson; Surya Narayana
- 卷第23卷
- 印刷ISSN0257-0130
- 电子ISSN1572-9443
- 文件大小1302.71KB
- 发表时间1996
- DOI10.1007/bf01206553
- 页码107-130
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Effect of electron bombardment on electrical properties of gallium arsenideM. A. Krivov; S. V. Malyanov; V. N. Brudnyi · 1966
Effect of electron irradiation on the parameters of gallium arsenide pulsed diodesV. N. Brudnyi; A. A. Vilisov; A. P. Vyatkin; M. A. Krivov; S. V. Malyanov · 1970
Effect of roentgen radiation on germanium and germanium p-n junctionsM. A. Krivov; S. V. Malyanov · 1966
The effect of X-rays on silicon and silicon p-n junctionsM. A. Krivov; S. V. Malyanov; V. I. Gaman · 1967
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Effect of x-radiation on the reverse current of silicon p-n-junctionsM. A. Krivov; S. V. Malyanov; L. S. Smirnov · 1969