Molecular beam epitaxial growth of high quality InAlAs on InP (100) substrates at very high arsenic pressures

• 作者S.F. Yoon; Y.B. Miao; K. Radhakrishnan
• 卷第279卷
• 印刷ISSN0040-6090
• 文件大小312.02KB
• 发表时间1996
• DOI10.1016/0040-6090(96)08835-9
• 页码11-13