发现好书期刊,享受阅读乐趣

海量图书期刊资源,随时随地畅享阅读乐趣

Junction depth dependence of breakdown in silicon detector diodes

Junction depth dependence of breakdown in silicon detector diodes

G.A. Beck; A.A. Carter; J.R. Carter; N.M. Greenwood; A.D. Lucas; D.J. Munday; T.W. Pritchard; D. Robinson; C.D. Wilburn; K. Wyllie
  • 作者G.A. Beck; A.A. Carter; J.R. Carter; N.M. Greenwood; A.D. Lucas; D.J. Munday; T.W. Pritchard; D. Robinson; C.D. Wilburn; K. Wyllie
  • 卷第373卷
  • 期第2期
  • 印刷ISSN0168-9002
  • 文件大小393.92KB
  • 发表时间1996
  • DOI10.1016/0168-9002(96)00015-0
  • 页码223-226
← 返回【学霸图书馆】主页