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Critical points of Si[sub 1−y]C[sub y] and Si[sub 1−x−y]Ge[sub x]C[sub y] layers strained pseudomorphically on Si(001)

Critical points of Si[sub 1−y]C[sub y] and Si[sub 1−x−y]Ge[sub x]C[sub y] layers strained pseudomorphically on Si(001)

Kissinger, W.; Osten, H. J.; Weidner, M.; Eichler, M.

期刊名称Journal of Applied Physics
作者Kissinger, W.; Osten, H. J.; Weidner, M.; Eichler, M.
卷第79卷
期第6期
印刷ISSN0021-8979
文件大小374.78KB
发表时间1996
DOI10.1063/1.362705

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