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[IEEE 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings - Sinaia, Romania (9-12 Oct. 1996)] 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings - Modeling of trapped hole induced MOS device degradation during Fowler-Nordheim stress

[IEEE 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings - Sinaia, Romania (9-12 Oct. 1996)] 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings - Modeling of trapped hole induced MOS device degradation during Fowler-Nordheim stress

Samanta, P.; Sarkar, C.K.
  • 作者Samanta, P.; Sarkar, C.K.
  • 卷第1卷
  • 文件大小386.57KB
  • 发表时间1996
  • DOI10.1109/smicnd.1996.557307
  • 页码67-70
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