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Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs

Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs

Fischetti, M V.; Sano, N.; Laux, S. E.; Natori, K.

期刊名称Journal of Technology Computer Aided Design TCAD
作者Fischetti, M V.; Sano, N.; Laux, S. E.; Natori, K.
电子ISSN1097-2102
文件大小15578.25KB
发表时间1996
DOI10.1109/tcad.1996.6449160
页码1-50

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