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The effect of microwave power on the deposition of boron-doped aSiC:H films using the electron cyclotron resonance method

The effect of microwave power on the deposition of boron-doped aSiC:H films using the electron cyclotron resonance method

S.F. Yoon; R. Ji; J. Ahn; W.I. Milne
  • 作者S.F. Yoon; R. Ji; J. Ahn; W.I. Milne
  • 卷第288卷
  • 印刷ISSN0040-6090
  • 文件大小260.50KB
  • 发表时间1996
  • DOI10.1016/s0040-6090(96)08803-7
  • 页码155-159
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