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[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Physical modeling of transient enhanced diffusion and dopant deactivation via extended defect evolution

[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Physical modeling of transient enhanced diffusion and dopant deactivation via extended defect evolution

Gencer, A.H.; Chakravarthi, S.; Dunham, S.T.
  • 作者Gencer, A.H.; Chakravarthi, S.; Dunham, S.T.
  • 文件大小377.37KB
  • 发表时间1997
  • DOI10.1109/SISPAD.1997.621340
  • 页码77-80
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