[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Physical modeling of transient enhanced diffusion and dopant deactivation via extended defect evolution
Gencer, A.H.; Chakravarthi, S.; Dunham, S.T.
- 作者Gencer, A.H.; Chakravarthi, S.; Dunham, S.T.
- 文件大小377.37KB
- 发表时间1997
- DOI10.1109/SISPAD.1997.621340
- 页码77-80