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[IEEE 11th International Conference on Ion Implantation Technology - Austin, TX, USA (16-21 June 1996)] Proceedings of 11th International Conference on Ion Implantation Technology - The effect of wells on gate oxide charging during plasma processing

[IEEE 11th International Conference on Ion Implantation Technology - Austin, TX, USA (16-21 June 1996)] Proceedings of 11th International Conference on Ion Implantation Technology - The effect of wells on gate oxide charging during plasma processing

Linder, B.P.; En, W.G.; Cheung, N.W.

作者Linder, B.P.; En, W.G.; Cheung, N.W.
文件大小485.45KB
发表时间1997
DOI10.1109/iit.1996.586575
页码788-791

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