Growth and Film Characteristics of N[sub 2]O and NO Oxynitride Gate and Tunnel Dielectrics
- 期刊名称Journal of The Electrochemical Society
- 作者Hegde, Rama I.
- 卷第144卷
- 期第3期
- 印刷ISSN0013-4651
- 文件大小1549.34KB
- 发表时间1997
- DOI10.1149/1.1837535
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