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Electronic structure, charge distribution, and charge transfer in α- and β-Si
<sub/>3</sub>
N
<sub/>4</sub>
and at the Si(111)/Si
<sub/>3</sub>
N
<sub/>4</sub>
(001) interface

Electronic structure, charge distribution, and charge transfer in α- and β-Si ₃ N ₄ and at the Si(111)/Si ₃ N ₄ (001) interface

Zhao, G. L; Bachlechner, M. E

期刊名称Europhysics Letters (EPL)
作者Zhao, G. L; Bachlechner, M. E
卷第37卷
期第4期
印刷ISSN0295-5075
电子ISSN1286-4854
文件大小280.25KB
发表时间1997-02-01
DOI10.1209/epl/i1997-00145-8
页码287-292

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