Impact of the polysilicon doping level on the properties of the silicon/oxide interface in polysilicon/oxide/silicon capacitor structures
- 作者C. Leveugle; P.K. Hurley; A. Mathewson; S. Moran; E. Sheehan; A. Kalnitsky; A. Lepert; I. Beinglass; M. Venkatesan
- 卷第36卷
- 印刷ISSN0167-9317
- 文件大小304.95KB
- 发表时间1997
- DOI10.1016/s0167-9317(97)00051-8
- 页码215-218
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