Epitaxial growth and characterization of GaSxSe1−x layered compound semiconductor by molecular beam epitaxy
- 作者Maman Budiman; Tamotsu Okamoto; Akira Yamada; Makoto Konagai
- 印刷ISSN0169-4332
- 文件大小395.06KB
- 发表时间1997
- DOI10.1016/s0169-4332(97)80135-3
- 页码518-522