The effect of base-emitter space-charge recombination on the temperature dependence of current gains in InGaP/GaAs and AlGaAs/GaAs HBTs

• 作者A.A. Rezazadeh; D.E. Kren; M.A. Crouch
• 卷第44卷
• 印刷ISSN0921-5107
• 文件大小469.17KB
• 发表时间1997
• DOI10.1016/s0921-5107(96)01735-7
• 页码345-350