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SPIE Proceedings [SPIE Material Science and Material Properties for Infrared Optoelectronics - Uzhgorod, Ukraine (Monday 30 September 1996)] Material Science and Material Properties for Infrared Optoelectronics - <title>Light and electric field influence on resistivity and long-term relaxations of piezoresistivity in p-GaAs/Al<formula><inf><roman>0.5</roman></inf></formula>Ga<formula><inf><roman>0.5</roman></inf></formula>As heterostructures</title>

SPIE Proceedings [SPIE Material Science and Material Properties for Infrared Optoelectronics - Uzhgorod, Ukraine (Monday 30 September 1996)] Material Science and Material Properties for Infrared Optoelectronics - Light and electric field influence on resistivity and long-term relaxations of piezoresistivity in p-GaAs/Al<formula><inf><roman>0.5</roman></inf></formula>Ga<formula><inf><roman>0.5</roman></inf></formula>As heterostructures

Bogdanov, E. V.; Hansen, Ole P.; Kolokolov, Konstantin I.; Kravchenko, V. N.; Minina, N. Y.; Olsen, J. S.; Savin, A. M.; Sizov, Fiodor F.; Tetyorkin, Vladimir V.
  • 作者Bogdanov, E. V.; Hansen, Ole P.; Kolokolov, Konstantin I.; Kravchenko, V. N.; Minina, N. Y.; Olsen, J. S.; Savin, A. M.; Sizov, Fiodor F.; Tetyorkin, Vladimir V.
  • 卷第3182卷
  • 印刷ISSN0277-786X
  • 文件大小537.82KB
  • 发表时间1997
  • DOI10.1117/12.280471
  • 页码68-72
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