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Polarized Light Absorption in Direct-Gap Semiconductors Related to Bound States in a Long-Range Deformation Potential of Dislocations

Polarized Light Absorption in Direct-Gap Semiconductors Related to Bound States in a Long-Range Deformation Potential of Dislocations

M.A. Razumova; V.M. Khotyaintsev
  • 作者M.A. Razumova; V.M. Khotyaintsev
  • 卷第210卷
  • 期第2期
  • 印刷ISSN0370-1972
  • 电子ISSN1521-3951
  • 文件大小152.78KB
  • 发表时间1998
  • DOI10.1002/(sici)1521-3951(199812)210:2<791::aid-pssb791>3.0.co;2-9
  • 页码791-796
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