[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Lateral thinking about power devices (LDMOS)
Efland, T.R.; Chin-Yu Tsai, ; Pendharkar, S.
- 作者Efland, T.R.; Chin-Yu Tsai, ; Pendharkar, S.
- 文件大小677.89KB
- 发表时间1998
- DOI10.1109/IEDM.1998.746447
- 页码679-682