partial dislocation in Si due to Ga impurities
- 期刊名称Physical Review B
- 作者Kaplan, Theodore; Mostoller, Mark; Chisholm, M. F.
- 卷第58卷
- 期第19期
- 印刷ISSN0163-1829
- 电子ISSN1095-3795
- 文件大小75.58KB
- 发表时间1998-11-15
- DOI10.1103/PhysRevB.58.12865
- 页码12865-12867
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