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Influencs of Surface V/III Ratio on the Film Quality during the GaN Growth in Gas-Source Molecular Beam Epitaxy

Influencs of Surface V/III Ratio on the Film Quality during the GaN Growth in Gas-Source Molecular Beam Epitaxy

Shen, Xu-Qiang; Tanaka, Satoru; Iwai, Sohachi; Aoyagi, Yoshinobu

期刊名称Japanese Journal of Applied Physics
作者Shen, Xu-Qiang; Tanaka, Satoru; Iwai, Sohachi; Aoyagi, Yoshinobu
卷第37卷
印刷ISSN0021-4922
文件大小251.93KB
发表时间1998-6-1
DOI10.1143/JJAP.37.L637

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