High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy

I. Sagnes; I. Prévot; G. Patriarche; G. Le Roux; B. Gayral; A. Lemaı̂tre; J.M. Gérard

作者I. Sagnes; I. Prévot; G. Patriarche; G. Le Roux; B. Gayral; A. Lemaı̂tre; J.M. Gérard
卷第195卷
印刷ISSN0022-0248
文件大小228.39KB
发表时间1998
DOI10.1016/s0022-0248(98)00580-6
页码524-529

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